unisonic technologies co., ltd mmdt8050s npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r218-012.d low vcesat npn epitaxial planar transistor ? description the utc mmdt8050s is a dual npn epitaxial planar transistor. it has low v ce(sat) performance, and the transistor elements are independent, eliminating interference. ? features * low v ce(sat) , v ce(sat) = 40mv (typ.) @ i c / i b = 50ma / 2.5ma * transistor elements are independent, eliminating interference. * mounting cost and area can be cut in half. ? equivalent circuit ? ordering information ordering number package pin assignment packing 1 2 3 4 5 6 mmdt8050sg-al6-r sot-363 e1 b1 c2 e2 b2 c1 tape reel ? marking
mmdt8050s npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r218-012.d ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6 v collector current (dc) i c 700 ma collector current (pulse) i cp 1.5 (note 2) a power dissipation p d 200 (total) mw junction temperature t j 150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. single pulse, p w =10ms ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = 100 a, i e = 0 30 v collector-emitter breakdown voltage bv ceo i c = 1ma, i b = 0 20 v emitter-base breakdown voltage bv ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30v,i e = 0 1 ua emitter cut-off current i ebo v eb = 5v, i c = 0 100 na dc current gain(note) h fe1 v ce = 1v, i c = 1ma 100 400 h fe2 v ce = 1v, i c = 150 ma 120 h fe3 v ce = 1v, i c = 500ma 40 collector-emitter satu ration voltage v ce ( sat ) i c = 500ma, i b = 50ma 0.5 v base-emitter satura tion voltage v be ( sat ) i c = 500ma, i b = 50ma 1.2 v base-emitter satura tion voltage v be ( sat ) v ce = 1v, i c = 10ma 1.0 v current gain bandwidth product f t v ce = 10v, i c = 50ma 100 mhz output capacitance cob v cb = 10v, i e = 0, f = 1mhz 9.0 pf note: pulse test: pulse width 380s, duty cycle 2%
mmdt8050s npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-012.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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